Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97559
Title: Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature
Authors: Chen, S.
Xu, H.
Goh, K. E. J.
Liu, Lerwen.
Randall, J. N.
Issue Date: 2012
Source: Chen, S., Xu, H., Goh, K. E. J., Liu, L., & Randall, J. N. (2012). Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature. Nanotechnology, 23(27).
Series/Report no.: Nanotechnology
Abstract: We have patterned sub-1 nm dangling-bond (DB) lines on a H-terminated Si(100)-2 × 1 surface aligned with atomic precision at room temperature using a scanning tunneling microscope (STM) to controllably desorb hydrogen atoms from a H:Si(100) surface. In order to achieve continuous and aligned DB lines, we have performed a detailed investigation of the effects of patterning parameters such as the writing voltage, writing current and electron dosage, as well as STM tip apex geometry on the fabrication and alignment of Si DB lines. We show that there exists an optimum set of patterning parameters which enables us to obtain near-perfect Si DB lines and align them with near atomic precision in a highly controllable manner. In addition, our results indicate that the pattern quality is weakly dependent on the STM tip apex quality when the patterning parameters are within the optimum parameter space.
URI: https://hdl.handle.net/10356/97559
http://hdl.handle.net/10220/10644
ISSN: 0957-4484
DOI: 10.1088/0957-4484/23/27/275301
Rights: © 2012 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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