Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/97644
Title: | Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking | Authors: | Peng, L. Zhang, L. Li, H. Y. Fan, Ji Lim, Dau Fatt Tan, Chuan Seng |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Peng, L., Fan, J., Zhang, L., Li, H. Y., Lim, D. F., & Tan, C. S. (2012). Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking. 2012 IEEE International Interconnect Technology Conference (IITC). | Abstract: | In this paper, we successfully demonstrate ultrahigh density (>; 10^6 cm^-2) Cu-Cu interconnects of 6-μm pitch using wafer-on-wafer thermo-compression bonding. This is a significant improvement from our previous achievement of 15-μm pitch. In addition, we integrate Cu sealing frame with excellent helium leak rate to the bonded structures to promote the overall bond reliability. On top of that, temporary passivation of Cu surface using self-assembled monolayer (SAM) enhances the resistance against oxidation and particle contamination. Finally, thermal cycling test confirmed the thermal stability of the Cu-Cu daisy chain structure up to 1,000 cycles. Hence, this work opens up new opportunity for wafer level integration of Cu-Cu bonding with state-of-the-art TSV technology, enabling future ultrahigh density 3D IC applications. | URI: | https://hdl.handle.net/10356/97644 http://hdl.handle.net/10220/12069 |
DOI: | 10.1109/IITC.2012.6251659 | Rights: | © 2012 IEEE. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Conference Papers |
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