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https://hdl.handle.net/10356/97644
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Peng, L. | en |
dc.contributor.author | Zhang, L. | en |
dc.contributor.author | Li, H. Y. | en |
dc.contributor.author | Fan, Ji | en |
dc.contributor.author | Lim, Dau Fatt | en |
dc.contributor.author | Tan, Chuan Seng | en |
dc.date.accessioned | 2013-07-23T07:15:10Z | en |
dc.date.accessioned | 2019-12-06T19:44:52Z | - |
dc.date.available | 2013-07-23T07:15:10Z | en |
dc.date.available | 2019-12-06T19:44:52Z | - |
dc.date.copyright | 2012 | en |
dc.date.issued | 2012 | en |
dc.identifier.citation | Peng, L., Fan, J., Zhang, L., Li, H. Y., Lim, D. F., & Tan, C. S. (2012). Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking. 2012 IEEE International Interconnect Technology Conference (IITC). | en |
dc.identifier.uri | https://hdl.handle.net/10356/97644 | - |
dc.description.abstract | In this paper, we successfully demonstrate ultrahigh density (>; 10^6 cm^-2) Cu-Cu interconnects of 6-μm pitch using wafer-on-wafer thermo-compression bonding. This is a significant improvement from our previous achievement of 15-μm pitch. In addition, we integrate Cu sealing frame with excellent helium leak rate to the bonded structures to promote the overall bond reliability. On top of that, temporary passivation of Cu surface using self-assembled monolayer (SAM) enhances the resistance against oxidation and particle contamination. Finally, thermal cycling test confirmed the thermal stability of the Cu-Cu daisy chain structure up to 1,000 cycles. Hence, this work opens up new opportunity for wafer level integration of Cu-Cu bonding with state-of-the-art TSV technology, enabling future ultrahigh density 3D IC applications. | en |
dc.language.iso | en | en |
dc.rights | © 2012 IEEE. | en |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering | en |
dc.title | Ultrafine pitch (6-µm) evolution of Cu-Cu bonded interconnects in 3D wafer-on-wafer stacking | en |
dc.type | Conference Paper | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.conference | IEEE International Interconnect Technology Conference (2012 : San Jose, California, US) | en |
dc.identifier.doi | 10.1109/IITC.2012.6251659 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | EEE Conference Papers |
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