Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97646
Full metadata record
DC FieldValueLanguage
dc.contributor.authorXu, Naiyunen
dc.contributor.authorTeo, Edwin Hang Tongen
dc.contributor.authorShakerzadeh, Maziaren
dc.contributor.authorWang, Xincaien
dc.contributor.authorNg, Chee Mangen
dc.contributor.authorTay, Beng Kangen
dc.date.accessioned2013-08-23T04:09:35Zen
dc.date.accessioned2019-12-06T19:44:53Z-
dc.date.available2013-08-23T04:09:35Zen
dc.date.available2019-12-06T19:44:53Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationXu, N., Teo, E. H. T., Shakerzadeh, M., Wang, X., Ng, C. M., & Tay, B. K. (2012). Electrical properties of textured carbon film formed by pulsed laser annealing. Diamond and Related Materials, (23), 135-139.en
dc.identifier.urihttps://hdl.handle.net/10356/97646-
dc.description.abstractPrevious works have showed that textured carbon film can be fabricated by applying suitable ion energy and substrate temperature. In this experiment, the effect of laser annealing on amorphous carbon films was studied. Atomic force microscopy shows the effect of laser irradiation on surface morphology of carbon film, and visible Raman spectroscopy shows that the G peak position shifted from 1540 cm− 1 to 1600 cm− 1, and the increase in I(D)/I(G) intensity ratio indicates the formation of more graphitic film at higher laser energy. High resolution transmission electron microscopy (HRTEM) shows the vertical alignment formation at suitable laser energy. Electrical measurement shows that the vertical aligned carbon films exhibit low resistance, ohmic current–voltage characteristics, which suggests that vertical aligned films formed by laser irradiation may be promising material for future nano-device interconnects.en
dc.language.isoenen
dc.relation.ispartofseriesDiamond and related materialsen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleElectrical properties of textured carbon film formed by pulsed laser annealingen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1016/j.diamond.2012.01.016en
item.grantfulltextnone-
item.fulltextNo Fulltext-
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations 20

11
Updated on Mar 6, 2021

PublonsTM
Citations 20

9
Updated on Mar 8, 2021

Page view(s) 10

658
Updated on May 21, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.