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|Title:||A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode||Authors:||Liu, W. J.
Tran, Xuan Anh
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Liu, W. J., Tran, X. A., Yu, H., & Sun, X. (2013). A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode. ECS solid state letters, 2(5), Q35-Q38.||Series/Report no.:||ECS solid state letters||Abstract:||A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-Ge substrate, RRAM cells possess a self-rectifying behavior in LRS which eliminates the read-out errors induced by leakage current paths in cross-bar array structure. The demonstrated RRAM device shows high ON/OFF ratio (>5 × 102 @ 0.5 V), and its effective Schottky barrier height is also addressed. The demonstrated HfOx-based RRAM devices provide a promising candidate as non-volatile memory devices using Ge-based technology.||URI:||https://hdl.handle.net/10356/97684
|DOI:||10.1149/2.006305ssl||Rights:||© 2013 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.006305ssl]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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