Please use this identifier to cite or link to this item:
Title: Applications of finite element methods for reliability study of ULSI interconnections
Authors: Tan, Cher Ming
Li, Wei
Gan, Zhenghao
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Series/Report no.: Microelectronics reliability
Abstract: Three main failure mechanisms of ULSI interconnects are the electromigration (EM), stress induced voiding (SIV) and low-k dielectric breakdown. Reliability tests for these mechanisms are too long to meet the development time requirement, and the underlying dominant mechanisms cannot be identified, rendering difficulty in design-in reliability for integrated circuit. Facing the challenges in the reliability study of the interconnect system, physics based simulation and modeling is found to be essential, and finite element method (FEM) is a suitable tool. A few examples on the application of FEM to study the degradation processes and identification of potential failure sites in interconnects due to EM and SIV are given here. The study of the process induced degradation of the effective k value of low-k dielectric in ULSI interconnect system using FEM is also presented.
DOI: 10.1016/j.microrel.2011.09.015
Rights: © 2011 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Citations 20

Updated on Jan 22, 2023

Web of ScienceTM
Citations 20

Updated on Jan 31, 2023

Page view(s) 50

Updated on Feb 3, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.