Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97754
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dc.contributor.authorChong, Kwen-Siongen
dc.contributor.authorBarangi, Mahmooden
dc.contributor.authorKim, Jaeyoungen
dc.contributor.authorChang, Joseph Sylvesteren
dc.contributor.authorMazumder, Pinakien
dc.date.accessioned2013-07-24T08:25:26Zen
dc.date.accessioned2019-12-06T19:46:08Z-
dc.date.available2013-07-24T08:25:26Zen
dc.date.available2019-12-06T19:46:08Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationChong, K.-S., Barangi, M., Kim, J., Chang, J. S., & Mazumder, P. (2012). Ultra low-power filter bank for hearing aid speech processor. 2012 IEEE Subthreshold Microelectronics Conference (SubVT), 1-3.en
dc.identifier.urihttps://hdl.handle.net/10356/97754-
dc.description.abstractAn ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.en
dc.language.isoenen
dc.rights© 2012 IEEE.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleUltra low-power filter bank for hearing aid speech processoren
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceIEEE Subthreshold Microelectronics Conference (2012 : Waltham, US)en
dc.identifier.doi10.1109/SubVT.2012.6404314en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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