Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97792
Title: Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment
Authors: Tran, Xuan Anh
Yu, Hongyu
Sun, Xiaowei
Liu, W. J.
Liu, X. B.
Wei, J.
Issue Date: 2012
Source: Liu, W. J., Tran, X. A., Liu, X. B., Wei, J., Yu, H., & Sun, X. (2012). Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment. ECS solid state letters, 2(1), M1-M4.
Series/Report no.: ECS solid state letters
Abstract: The performance of a single-layer graphene field effect transistor treated with UV/ozone at various temperatures is studied. It is observed that the number of the defects in graphene sheet increases with the UV/ozone treatment time, evidenced by Raman spectra. Moreover, the UV/ozone treatment dopes graphene into p-type as the time increases, which is consistent with the electric transfer measurements. With the increase in the UV/ozone treatment time, the mobility of graphene transistor degrades, and the degradation accelerates with the increase in temperature. We further verified by XPS measurement that the oxygen related carbon group O=C-O formation is the main cause for the mobility degradation.
URI: https://hdl.handle.net/10356/97792
http://hdl.handle.net/10220/13225
DOI: 10.1149/2.005301ssl
Rights: © 2012 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.005301ssl].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MAE Journal Articles

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