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|Title:||Piezoresistive sensing performance of junctionless nanowire FET||Authors:||Singh, Pushpapraj
Kwong, Dim Lee
|Keywords:||DRNTU::Engineering::Mechanical engineering||Issue Date:||2012||Series/Report no.:||IEEE electron device letters||Abstract:||This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.||URI:||https://hdl.handle.net/10356/97805
|DOI:||10.1109/LED.2012.2217112||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MAE Journal Articles|
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