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Title: Piezoresistive sensing performance of junctionless nanowire FET
Authors: Singh, Pushpapraj
Miao, Jianmin
Pott, Vincent
Park, Woo-Tae
Kwong, Dim Lee
Keywords: DRNTU::Engineering::Mechanical engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.
DOI: 10.1109/LED.2012.2217112
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

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