Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/97805
Title: | Piezoresistive sensing performance of junctionless nanowire FET | Authors: | Singh, Pushpapraj Miao, Jianmin Pott, Vincent Park, Woo-Tae Kwong, Dim Lee |
Keywords: | DRNTU::Engineering::Mechanical engineering | Issue Date: | 2012 | Series/Report no.: | IEEE electron device letters | Abstract: | This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors. | URI: | https://hdl.handle.net/10356/97805 http://hdl.handle.net/10220/11345 |
DOI: | 10.1109/LED.2012.2217112 | Schools: | School of Mechanical and Aerospace Engineering | Rights: | © 2012 IEEE. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | MAE Journal Articles |
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