Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97841
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dc.contributor.authorZhang, Xiaoen
dc.contributor.authorZhang, Runqien
dc.contributor.authorZhan, Mingzhouen
dc.contributor.authorXie, Junen
dc.contributor.authorXu, Ruiminen
dc.date.accessioned2013-07-25T01:39:30Zen
dc.date.accessioned2019-12-06T19:47:17Z-
dc.date.available2013-07-25T01:39:30Zen
dc.date.available2019-12-06T19:47:17Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationZhang, X., Zhang, R., Zhan, M., Xie, J., & Xu, R. (2012). A Ka-band Rectangular Waveguide to microstrip transition using SIR coupling slot with LTCC technology. 2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).en
dc.identifier.urihttps://hdl.handle.net/10356/97841-
dc.identifier.urihttp://hdl.handle.net/10220/12140en
dc.description.abstractIn this paper, a Rectangular Waveguide (RW) to microstrip transition with Low-Temperature Co-fired Ceramic (LTCC) technology in Ka-band is designed, fabricated and measured. Compared to the traditional transition using a rectangular slot, the proposed Stepped-Impedance Resonator (SIR) slot enlarges the bandwidth of the transition. By introducing an additional design parameter, it generates multi-modes within the transition. To further improve the bandwidth and to adjust the performance of the transition, a resonant strip is embedded between the open microstrip line and its ground plane. Measured results agree well with that of the simulation, showing an effective bandwidth about 22% (from 28.5 GHz to 36.5GHz), an insertion loss approximately 3 dB and return loss better than 15 dB in the pass-band.en
dc.language.isoenen
dc.rights© 2012 IEEE.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleA Ka-band rectangular waveguide to microstrip transition using SIR coupling slot with LTCC technologyen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceInternational Conference on Microwave and Millimeter Wave Technology (2012 : Shenzhen, China)en
dc.identifier.doi10.1109/ICMMT.2012.6230017en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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