Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/97866| Title: | 4H-SiC wafers studied by X-ray absorption and Raman scattering | Authors: | Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials | Issue Date: | 2012 | Conference: | Silicon Carbide and Related Materials (2011) | Abstract: | Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies. | URI: | https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147 |
DOI: | 10.4028/www.scientific.net/MSF.717-720.509 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2012 Trans Tech Publications, Switzerland. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
| Appears in Collections: | EEE Conference Papers |
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