Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97897
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dc.contributor.authorVaddi, Rameshen
dc.contributor.authorPott, Vincenten
dc.contributor.authorChua, Geng Lien
dc.contributor.authorLin, Julius Tsai Mingen
dc.contributor.authorKim, Tony Tae-Hyoungen
dc.date.accessioned2013-07-12T06:31:05Zen
dc.date.accessioned2019-12-06T19:47:56Z-
dc.date.available2013-07-12T06:31:05Zen
dc.date.available2019-12-06T19:47:56Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.urihttps://hdl.handle.net/10356/97897-
dc.identifier.urihttp://hdl.handle.net/10220/11330en
dc.description.abstractThis letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates better scalability compared to conventional anchored NEM devices, which is desirable for circuit applications. The structure is electrostatically actuated and has low operating voltage. A novel memory cell consisting of the proposed NEM memory device and two MOS transistors (1NEM-2T) is proposed for array implementation. The scalability analysis of the proposed NEM NVM array is also presented.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE electron device lettersen
dc.rights© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/LED.2012.2206364].en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDesign and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory deviceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2012.2206364en
dc.description.versionAccepted versionen
item.grantfulltextopen-
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