Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97926
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dc.contributor.authorHe, Feifeien
dc.contributor.authorTan, Cher Mingen
dc.date.accessioned2013-07-11T07:06:16Zen
dc.date.accessioned2019-12-06T19:48:25Z-
dc.date.available2013-07-11T07:06:16Zen
dc.date.available2019-12-06T19:48:25Z-
dc.date.copyright2011en
dc.date.issued2011en
dc.identifier.urihttps://hdl.handle.net/10356/97926-
dc.identifier.urihttp://hdl.handle.net/10220/11218en
dc.description.abstractWith the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D simulators is limited as the actual physical implementation of the circuit in a wafer is indeed 3D in nature, and is much more complicated than 2D. In this paper, we construct a complete 3D circuit model of a RF low noise amplifier (LNA) circuit, including both the intra- and inter-block interconnects. Electric-thermal-structural simulations are performed and the modifications that help to enhance the EM reliability of the circuit are carried out based on the simulation results.en
dc.language.isoenen
dc.relation.ispartofseriesMicroelectronics reliabilityen
dc.rights© 2011 Elsevier Ltd.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleElectromigration reliability of interconnections in RF low noise amplifier circuiten
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1016/j.microrel.2011.09.033en
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:EEE Journal Articles

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