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|Title:||800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factor||Authors:||Liu, L.
Goh, Wang Ling
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Liu, L., Zou, X., Goh, W., Rajkumar, R, Dawe, G., & Je, M. (2012). 800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factor. Electronics letters, 48(9), 479.||Series/Report no.:||Electronics letters||Abstract:||Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/ p Hz and the input-referred noise is 5.71 mVrms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mm CMOS technology, occupying an area of 0.05 mm2.||URI:||https://hdl.handle.net/10356/98085
|ISSN:||0013-5194||DOI:||10.1049/el.2012.0685||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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