Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/98085
Title: | 800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factor | Authors: | Liu, L. Zou, X. Goh, Wang Ling Rajkumar, Ramamoorthy Dawe, Gavin Je, Minkyu |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Liu, L., Zou, X., Goh, W., Rajkumar, R, Dawe, G., & Je, M. (2012). 800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factor. Electronics letters, 48(9), 479. | Series/Report no.: | Electronics letters | Abstract: | Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/ p Hz and the input-referred noise is 5.71 mVrms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mm CMOS technology, occupying an area of 0.05 mm2. | URI: | https://hdl.handle.net/10356/98085 http://hdl.handle.net/10220/13265 |
ISSN: | 0013-5194 | DOI: | 10.1049/el.2012.0685 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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