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|Title:||Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors||Authors:||Liu, P.
Li, X. D.
Wong, J. I.
Leong, K. C.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Liu, P., Chen, T., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., & Leong, K. C. (2013). Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. ECS solid state letters, 2(4), Q21-Q24.||Series/Report no.:||ECS solid state letters||Abstract:||An exposure of the back channel of an indium gallium zinc oxide (IGZO) thin film transistor (TFT) to ultraviolet (UV)-activated oxygen can effectively shift the threshold voltage (Vth) of the TFT. The Vth decreases linearly with the exposure time while the on-state current greatly increase with the exposure time. The exposure doesn't have a strong impact on other device parameters. The effect of the exposure on the Vth is attributed to the increase in the electron concentration of the channel layer as a result of the creation of oxygen vacancies by exposure.||URI:||https://hdl.handle.net/10356/98140
|DOI:||10.1149/2.005304ssl||Rights:||© 2013 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.005304ssl]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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