Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98226
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dc.contributor.authorMario, Hendroen
dc.contributor.authorLim, Meng Keongen
dc.contributor.authorGan, Chee Lipen
dc.date.accessioned2013-07-25T08:44:46Zen
dc.date.accessioned2019-12-06T19:52:15Z-
dc.date.available2013-07-25T08:44:46Zen
dc.date.available2019-12-06T19:52:15Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationMario, H., Lim, M. K., & Gan, C. L. (2012). Impact of pre-existing voids on electromigration in copper interconnects. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).en
dc.identifier.urihttps://hdl.handle.net/10356/98226-
dc.description.abstractPrevious in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.en
dc.language.isoenen
dc.rights© 2012 IEEE.en
dc.titleImpact of pre-existing voids on electromigration in copper interconnectsen
dc.typeConference Paperen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.conferenceInternational Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore)en
dc.identifier.doi10.1109/IPFA.2012.6306330en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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