Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98257
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLi, Yongfengen
dc.contributor.authorYin, Wanjianen
dc.contributor.authorDeng, Ruien
dc.contributor.authorChen, Ruien
dc.contributor.authorChen, Jingen
dc.contributor.authorYan, Qingyuen
dc.contributor.authorYao, Binen
dc.contributor.authorSun, Handongen
dc.contributor.authorWei, Su-Huaien
dc.contributor.authorWu, Tomen
dc.date.accessioned2013-11-11T05:20:49Zen
dc.date.accessioned2019-12-06T19:52:49Z-
dc.date.available2013-11-11T05:20:49Zen
dc.date.available2019-12-06T19:52:49Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLi, Y., Yin, W., Deng, R., Chen, R., Chen, J., Yan, Q., et al. (2012). Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule. NPG Asia Materials, 4, e30-.en
dc.identifier.issn1884-4057en
dc.identifier.urihttps://hdl.handle.net/10356/98257-
dc.identifier.urihttp://hdl.handle.net/10220/17569en
dc.description.abstractAlthough many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechanical rule severely constrains the optical applications of wide-bandgap oxides, which is also the reason why so few oxides enjoy the success of ZnO. Here, using SnO2 as an example, we demonstrate both theoretically and experimentally that UV photoluminescence and electroluminescence can be recovered and enhanced in wide-bandgap oxide thin films with ‘forbidden’ energy gaps by engineering their nanocrystalline structures. In our experiments, the tailored low-temperature annealing process results in a hybrid structure containing SnO2 nanocrystals in an amorphous matrix, and UV emission is observed in such hybrid SnO2 thin films, indicating that the quantum mechanical dipole-forbidden rule has been effectively overcome. Using this approach, we demonstrate the first prototypical electrically pumped UV-light-emitting diode based on nanostructured SnO2 thin films.en
dc.relation.ispartofseriesNPG Asia materialsen
dc.rights© 2012 The Author(s) (Nature Publishing Group). This work is licensed under the Creative Commons Attribution-NonCommercial-No Derivative Works 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/.en
dc.titleRealizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden ruleen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doihttp://dx.doi.org/10.1038/am.2012.56en
dc.description.versionPublished versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
Appears in Collections:MSE Journal Articles
SPMS Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.