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Title: Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles
Authors: Lee, Chun Wei
Weng, Cheng-Hui
Wei, Li
Chen, Yuan
Chan-Park, Mary B.
Tsai, Chuen-Horng
Leou, Keh-Chyang
Poa, Patrick C. H.
Wang, Junling
Li, Lain-Jong
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2008
Source: Lee, C. W., Weng, C. H., Wei, L., Chen, Y., Chan-Park, M. B., Tsai, C. H., & et al. (2008). Toward High-Performance Solution-Processed Carbon Nanotube Network Transistors by Removing Nanotube Bundles. Journal of physical chemistry C, 112(32), 12089-12091.
Series/Report no.: Journal of physical chemistry C
Abstract: Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60−65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic−aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by 1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.
DOI: 10.1021/jp805434d
Rights: © 2008 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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