Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98317
Title: Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention
Authors: Wang, Yuhao
Zhang, Chun
Yu, Hao
Zhang, Wei
Issue Date: 2012
Source: Wang, Y., Zhang, C., Yu, H., & Zhang, W. (2012). Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention. Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design (ISLPED).
Abstract: As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model and circuit-level characterization. It is then deployed as NVM component with a 3D hybrid integration of SRAM/DRAM, where one layer of CBRAM-crossbar is designed for data-retention under power gating to reduce leakage power from SRAM/DRAM at other layers. Moreover, a block-level data-retention scheme is designed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared to the hybrid memory using phase-change random access memory (PCRAM) as data-retention, our CBRAM-based hybrid memory achieves 16x faster migration time and 4x less migration power for hibernating transition. When compared to the FeRAM-based bit-wise data-retention, our approach also achieves 17x smaller area and 8x smaller power under the same data migration speed.
URI: https://hdl.handle.net/10356/98317
http://hdl.handle.net/10220/12366
DOI: 10.1145/2333660.2333709
Rights: © 2012 ACM.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SCSE Conference Papers

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