Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98329
Title: AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process
Authors: Liu, Xinke
Zhan, Chunlei
Chan, Kwok Wai
Owen, Man Hon Samuel
Liu, Wei
Chi, Dong Zhi
Tan, Leng Seow
Chen, Kevin Jing
Yeo, Yee-Chia
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Liu, X., Zhan, C., Chan, K. W., Owen, M. H. S., Liu, W., Chi, D. Z., et al. (2013). AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process. Japanese journal of applied physics, 52, 04CF06-.
Series/Report no.: Japanese journal of applied physics
Abstract: This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an off-state breakdown voltage VBR of 1400 V and an on-state resistance Ron of 22m cm2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of 109 and low gate leakage current IG of 10 11 A/mm were also obtained.
URI: https://hdl.handle.net/10356/98329
http://hdl.handle.net/10220/17291
DOI: 10.7567/JJAP.52.04CF06
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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