Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98332
Title: In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
Authors: Teo, Khoon Leng
Ng, Geok Ing
Ranjan, Kumud
Shoron, O. F.
Arulkumaran, Subramaniam
Rajan, S.
Dolmanan, S. B.
Manoj Kumar, Chandra Mohan
Tripathy, S.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2014
Source: Arulkumaran, S., Ng, G.I., Manoj Kumar, C.M., Ranjan, K., Teo, K.L., Shoron, O. F., et al. (2014). In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V. 2014 IEEE International Electron Devices Meeting (IEDM), 25.6.1-25.6.4.
Abstract: We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 μA/mm, ION/IOFF~106, SS=82 mV/dec at VD=0.5 V were achieved. In addition, the Fin-HEMT also exhibited 3.2 times lower DIBL of 28 mV/V. The dramatic improvement of device performance is due to the tensile stress induced by SiN passivation in the NC Fin-HEMT.
URI: https://hdl.handle.net/10356/98332
http://hdl.handle.net/10220/25663
DOI: 10.1109/IEDM.2014.7047109
Rights: ©2014 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:TL Conference Papers

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