Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98334
Title: High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
Authors: Ranjan, Kumud
Arulkumaran, Subramaniam
Ng, Geok Ing
Vicknesh, Sahmuganathan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2014
Source: Ranjan, K., Arulkumaran, S., Ng, G. I., & Vicknesh, S. (2014). High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon. Applied physics express, 7(4), 044102-.
Series/Report no.: Applied physics express
Abstract: AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. The device exhibited a unity current gain cutoff frequency fT of 63 GHz and maximum oscillation frequency fmax of 124 GHz. Its three-terminal OFF-state breakdown voltage BVgd is as high as 132 V. The estimated Johnson's figure of merit (=BVgd × fT) is 8.32 × 1012 V/s (8.32 THz·V), which is the highest value ever reported for a conventional SiN-passivated T-gate AlGaN/GaN HEMTs on a Si substrate without an additional field plate or gamma gate.
URI: https://hdl.handle.net/10356/98334
http://hdl.handle.net/10220/25662
DOI: 10.7567/APEX.7.044102
Rights: © 2014 The Japan Society of Applied Physics.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
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