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|Title:||High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon||Authors:||Ranjan, Kumud
Ng, Geok Ing
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2014||Source:||Ranjan, K., Arulkumaran, S., Ng, G. I., & Vicknesh, S. (2014). High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon. Applied physics express, 7(4), 044102-.||Series/Report no.:||Applied physics express||Abstract:||AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. The device exhibited a unity current gain cutoff frequency fT of 63 GHz and maximum oscillation frequency fmax of 124 GHz. Its three-terminal OFF-state breakdown voltage BVgd is as high as 132 V. The estimated Johnson's figure of merit (=BVgd × fT) is 8.32 × 1012 V/s (8.32 THz·V), which is the highest value ever reported for a conventional SiN-passivated T-gate AlGaN/GaN HEMTs on a Si substrate without an additional field plate or gamma gate.||URI:||https://hdl.handle.net/10356/98334
|DOI:||10.7567/APEX.7.044102||Rights:||© 2014 The Japan Society of Applied Physics.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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