Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98351
Title: Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
Authors: Ye, G.
Wang, Hong
Arulkumaran, Subramaniam
Ng, Geok Ing
Hofstetter, R.
Li, Y.
Anand, M. J.
Ang, K. S.
Bryan, Maung Ye Kyaw Thu
Foo, Siew Chuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Hofstetter, R., Li, Y., et al. (2013). Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon. Applied physics letters, 103(14), 142109-.
Series/Report no.: Applied physics letters
Abstract: In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (I dmax) with high peak transconductance (g mmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from −0.29 eV to −0.36 eV, low interface trap state density evaluated by AC conductance and “Hi-Lo frequency” methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer.
URI: https://hdl.handle.net/10356/98351
http://hdl.handle.net/10220/18429
ISSN: 0003-6951
DOI: 10.1063/1.4824445
Rights: © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4824445]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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