Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98370
Title: High frequency drain current noise modeling in MOSFETs under sub-threshold condition
Authors: Chan, Lye Hock
Yeo, Kiat Seng
Chew, Kok Wai Johnny
Ong, Shih Ni
Loo, Xi Sung
Boon, Chirn Chye
Do, Manh Anh
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2009
Source: Chan, L. H., Yeo, K. S., Chew, K. W. J., Ong, S. N., Loo, X. S., Boon, C. C., & Do, M. A.(2009). Integrated Circuits, ISIC '09. In Proceedings of the 2009 12th International Symposium (pp.310-313)
Abstract: A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.
URI: https://hdl.handle.net/10356/98370
http://hdl.handle.net/10220/6282
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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