Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98411
Title: Impact ionization and auger recombination rates in semiconductor quantum dots
Authors: Fu, Ying
Zhou, Y. H.
Su, Haibin
Boey, Freddy Yin Chiang
Ågren, Hans
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2010
Source: Fu, Y., Zhou, Y. H., Su, H., Boey, F. Y. C., & Ågren, H. (2010). Impact ionization and auger recombination rates in semiconductor quantum dots. Journal of physical chemistry C, 114 (9), 3743–3747.
Series/Report no.: Journal of physical chemistry C
Abstract: Impact ionization and Auger recombination in nanoscale spherical quantum dots (QDs) have been studied theoretically. It is shown that due to the strong quantum confinement of both electrons in the conduction band and holes in the valence band, impact ionization and Auger recombination energies in these QDs can be on the order of a few millielectronvolts when various selection rules are fulfilled, which are much higher than spontaneous radiative emission energies. This explains the experimentally reported high occurrence rates of the multiple exciton generation (MEG) effect in QDs. However, due to quantum confinement, the energy states are discrete in QDs, especially for low-energy states where the densities of states are low. This implies that only a limited number of high-energy electron states can interact with (i.e., impact ionize) low-energy hole states in QDs having certain values of radii due to the energy conservation requirement. This explains the vastly scattered experimental data and difficulties in utilizing the MEG effect in practice.
URI: https://hdl.handle.net/10356/98411
http://hdl.handle.net/10220/7429
DOI: 10.1021/jp9082486
Rights: © 2010 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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