Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98448
Title: Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching
Authors: Raghavan, Nagarajan
Pey, Kin Leong
Wu, Xing
Liu, Wenhu
Bosman, Michel
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.
URI: https://hdl.handle.net/10356/98448
http://hdl.handle.net/10220/11336
DOI: 10.1109/LED.2012.2187170
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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