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|Title:||A self-rectifying HfOx-based unipolar RRAM with NiSi electrode||Authors:||Tran, Xuan Anh
Zhu, W. G.
Kang, J. F.
Liu, W. J.
Wang, Z. R.
Yeo, Y. C.
Nguyen, B. Y.
Li, M. F.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Series/Report no.:||IEEE electron device letters||Abstract:||In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).||URI:||https://hdl.handle.net/10356/98464
|DOI:||10.1109/LED.2011.2181971||Schools:||School of Electrical and Electronic Engineering||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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