Please use this identifier to cite or link to this item:
Title: A self-rectifying HfOx-based unipolar RRAM with NiSi electrode
Authors: Tran, Xuan Anh
Gao, Bin
Yu, Hongyu
Zhu, W. G.
Kang, J. F.
Liu, W. J.
Fang, Z.
Wang, Z. R.
Yeo, Y. C.
Nguyen, B. Y.
Li, M. F.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).
DOI: 10.1109/LED.2011.2181971
Schools: School of Electrical and Electronic Engineering 
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Citations 20

Updated on May 27, 2023

Web of ScienceTM
Citations 20

Updated on Jun 1, 2023

Page view(s) 20

Updated on Jun 6, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.