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|Title:||High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology||Authors:||Abe, Masayuki
Ang, Kian Siong
Ng, Geok Ing
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Series/Report no.:||IEEE electron device letters||Abstract:||Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.||URI:||https://hdl.handle.net/10356/98469
|DOI:||10.1109/LED.2012.2204399||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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