Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98469
Title: High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology
Authors: Abe, Masayuki
Abe, Yuki
Kogushi, Noriaki
Ang, Kian Siong
Hofstetter, René
Wang, Hong
Ng, Geok Ing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.
URI: https://hdl.handle.net/10356/98469
http://hdl.handle.net/10220/11332
DOI: 10.1109/LED.2012.2204399
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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