Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98534
Title: Solution synthesis of CdIn2S4 nanocrystals and their photoelectrical application
Authors: Peng, Shengjie
Mhaisalkar, Subodh Gautam
Ramakrishna, Seeram
Keywords: DRNTU::Engineering::Materials
Issue Date: 2012
Source: Peng, S., Mhaisalkar, S. G., & Ramakrishna, S. (2012). Solution synthesis of CdIn2S4 nanocrystals and their photoelectrical application. Materials letters, 79, 216-218.
Series/Report no.: Materials letters
Abstract: CdIn2S4 nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV–vis spectroscopy. The results showed that the CdIn2S4 nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn2S4 ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450 °C for 30 min in Ar and sulfur atmospheres, the CdIn2S4-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm− 2).
URI: https://hdl.handle.net/10356/98534
http://hdl.handle.net/10220/17254
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2012.04.014
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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