Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98548
Title: Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
Authors: Li, Yang
Ng, Geok Ing
Arulkumaran, Subramaniam
Manoj Kumar, Chandra Mohan
Ang, Kian Siong
Anand, Mulagumoottil Jesudas
Wang, Hong
Hofstetter, René
Ye, Gang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2013
Source: Li, Y., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ang, K. S., Anand, M. J., et al. (2013). Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon. Applied physics express, 6(11), 116501-.
Series/Report no.: Applied physics express
Abstract: Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 °C and slightly increases from 875 to 900 °C. The sample annealed at 850 °C exhibited the lowest Rc of 0.22±0.03 Ω·mm [specific contact resistivity, ρc=(0.78±0.22)×10-6 Ω·cm2] with a smooth surface morphology (RMS roughness ~5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface.
URI: https://hdl.handle.net/10356/98548
http://hdl.handle.net/10220/25659
DOI: 10.7567/APEX.6.116501
Rights: © 2013 The Japan Society of Applied Physics.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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