Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98589
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dc.contributor.authorDing, Zhihaoen
dc.contributor.authorHu, Guangxien
dc.contributor.authorLiu, Ranen
dc.contributor.authorWang, Linglien
dc.contributor.authorHu, Shuyanen
dc.contributor.authorZhou, Xingen
dc.date.accessioned2013-11-15T06:55:34Zen
dc.date.accessioned2019-12-06T19:57:10Z-
dc.date.available2013-11-15T06:55:34Zen
dc.date.available2019-12-06T19:57:10Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationDing, Z., Hu, G., Liu, R., Wang, L., Hu, S., & Zhou, X. (2013). Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors. Journal of the korean physical society, 62(8), 1188-1193.en
dc.identifier.urihttps://hdl.handle.net/10356/98589-
dc.description.abstractAnalytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtained. With the potential model, an analytical expression for the threshold voltage is achieved. An expression for the drain current is derived from the potential model. The analytical results are compared with simulations, and excellent agreements are observed. The models accurately describe the characteristics of JLDG FETs, and they are very helpful for the design and optimization of devices.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of the korean physical societyen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleAnalytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.3938/jkps.62.1188en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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