Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98589
Title: Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors
Authors: Ding, Zhihao
Hu, Guangxi
Liu, Ran
Wang, Lingli
Hu, Shuyan
Zhou, Xing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Ding, Z., Hu, G., Liu, R., Wang, L., Hu, S., & Zhou, X. (2013). Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors. Journal of the korean physical society, 62(8), 1188-1193.
Series/Report no.: Journal of the korean physical society
Abstract: Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtained. With the potential model, an analytical expression for the threshold voltage is achieved. An expression for the drain current is derived from the potential model. The analytical results are compared with simulations, and excellent agreements are observed. The models accurately describe the characteristics of JLDG FETs, and they are very helpful for the design and optimization of devices.
URI: https://hdl.handle.net/10356/98589
http://hdl.handle.net/10220/17701
DOI: 10.3938/jkps.62.1188
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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