Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98591
Title: Two-write WOM-codes for non-volatile memories
Authors: Chua, Melissa Wan Jun
Cai, Kui
Goh, Wang Ling
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Chua, M. W. J., Cai, K., & Goh, W. L. (2012). Two-write WOM-Codes for Non-Volatile Memories. 2012 International Symposium on Intelligent Signal Processing and Communications Systems, 710-715.
Abstract: A Write Once Memory (WOM) is defined as a class of storage medium with each storage element, known as a cell, containing binary information. In the context of a WOM, there is an added constraint, whereby the cells can only move irreversibly from the zero state to the one state. In this work, we investigate the problem of rewriting WOM for two successive writing operations, since having a higher number of writing operations would require a larger decrease of the code rate and hence the memory storage efficiency. We first analyze a two-write WOM-Code construction method and then propose a criterion to select a linear code such that the WOM-Rate is maximized. By using the proposed criterion, we design efficient WOM-Codes, whose rates are higher than those available in literature.
URI: https://hdl.handle.net/10356/98591
http://hdl.handle.net/10220/16898
DOI: 10.1109/ISPACS.2012.6473583
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Page view(s) 20

554
Updated on Sep 24, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.