Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98591
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dc.contributor.authorChua, Melissa Wan Junen
dc.contributor.authorCai, Kuien
dc.contributor.authorGoh, Wang Lingen
dc.date.accessioned2013-10-25T03:04:15Zen
dc.date.accessioned2019-12-06T19:57:11Z-
dc.date.available2013-10-25T03:04:15Zen
dc.date.available2019-12-06T19:57:11Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationChua, M. W. J., Cai, K., & Goh, W. L. (2012). Two-write WOM-Codes for Non-Volatile Memories. 2012 International Symposium on Intelligent Signal Processing and Communications Systems, 710-715.en
dc.identifier.urihttps://hdl.handle.net/10356/98591-
dc.description.abstractA Write Once Memory (WOM) is defined as a class of storage medium with each storage element, known as a cell, containing binary information. In the context of a WOM, there is an added constraint, whereby the cells can only move irreversibly from the zero state to the one state. In this work, we investigate the problem of rewriting WOM for two successive writing operations, since having a higher number of writing operations would require a larger decrease of the code rate and hence the memory storage efficiency. We first analyze a two-write WOM-Code construction method and then propose a criterion to select a linear code such that the WOM-Rate is maximized. By using the proposed criterion, we design efficient WOM-Codes, whose rates are higher than those available in literature.en
dc.language.isoenen
dc.rights© 2012 IEEEen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleTwo-write WOM-codes for non-volatile memoriesen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceInternational Symposium on Intelligent Signal Processing and Communications Systems (2012 : Taipei, Taiwan)en
dc.identifier.doi10.1109/ISPACS.2012.6473583en
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:EEE Conference Papers

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