Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98600
Title: Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
Authors: Li, Yang
Ng, Geok Ing
Arulkumaran, Subramaniam
Ye, Gang
Manoj Kumar, Chandra Mohan
Anand, Mulagumoottil Jesudas
Liu, Zhi Hong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2015
Source: Li, Y., Ng, G. I., Arulkumaran, S., Ye, G., Manoj Kumar, C. M., Anand, M. J., et al. (2015). Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors. Applied physics express, 8(4), 041001-.
Series/Report no.: Applied physics express
Abstract: This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current–voltage (I–V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal–semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism.
URI: https://hdl.handle.net/10356/98600
http://hdl.handle.net/10220/25661
DOI: 10.7567/APEX.8.041001
Rights: © 2015 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied physics express, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.7567/APEX.8.041001].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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