Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98605
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dc.contributor.authorWu, Dien
dc.contributor.authorWen, Zhengen
dc.contributor.authorShen, Xuanen
dc.contributor.authorWu, Jingxianen
dc.contributor.authorLi, Aidongen
dc.contributor.authorYang, Binen
dc.contributor.authorWang, Zhuen
dc.contributor.authorChen, Hengzhien
dc.contributor.authorWang, Junlingen
dc.date.accessioned2011-07-05T06:03:55Zen
dc.date.accessioned2019-12-06T19:57:27Z-
dc.date.available2011-07-05T06:03:55Zen
dc.date.available2019-12-06T19:57:27Z-
dc.date.copyright2010en
dc.date.issued2010en
dc.identifier.citationWen, Z., Shen, X., Wu, J., Wu, D., Li, A., Yang, B., et al. (2010). Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films. Applied Physics Letters, 96.en
dc.identifier.urihttps://hdl.handle.net/10356/98605-
dc.description.abstractLeakage current characteristics of (Bi0.86Pr0.14)(Fe0.95Mn0.05)O3 (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole–Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.3432083. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.subjectDRNTU::Engineering::Materials::Magnetic materialsen
dc.titleTemperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin filmsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1063/1.3432083en
dc.description.versionPublished versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
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