Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98616
Title: Design optimization of pulsed-mode electromechanical nonvolatile memory
Authors: Pott, Vincent
Vaddi, Ramesh
Chua, Geng Li
Lin, Julius Tsai Ming
Kim, Tony Tae-Hyoung
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces show excellent reliability at HT. This letter presents design optimization of an electrostatic NEM NVM device. The set/ reset principle is based on the pulsed-mode switching of a mechanically free electrode (the shuttle), which is placed inside a guiding pod, having two stable positions. Based on the shuttle kinematic equation, this letter derives key design and operation parameters, particularly optimization in terms of switching speed and switching energy. The small footprint of the shuttle NEM NVM makes it applicable to ultracompact and reliable data storage at HT.
URI: https://hdl.handle.net/10356/98616
http://hdl.handle.net/10220/11329
DOI: 10.1109/LED.2012.2201440
Rights: © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/LED.2012.2201440].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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