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Title: Exciton-polariton lasers in magnetic fields
Authors: Durnev, M.
Kavokin, A. V.
Yamamoto, Y.
Forchel, A.
Kamp, M.
Höfling, S.
Schneider, C.
Fischer, J.
Brodbeck, S.
Savenko, I. G.
Shelykh, I. A.
Chernenko, A.
Rahimi-Iman, A.
Kulakovskii, V. D.
Reitzenstein, S.
Kim, N. Y.
Amthor, Matthias
Keywords: DRNTU::Science::Physics::Radiation physics
Issue Date: 2014
Source: Schneider, C., Fischer, J., Amthor, M., Brodbeck, S., Savenko, I. G., Shelykh, I. A., et al. (2013). Exciton-polariton lasers in Magnetic Fields. Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899308-.
Abstract: Polariton lasers do not rely on stimulated emission of cavity photons, which sets stringent conditions on the threshold current in a conventional laser. Indeed, it has been demonstrated in optically pumped systems, that bosonic polariton lasers can outperform standard lasers in terms of their threshold power. The polaritons, which are part light and part matter quasiparticles, can undergo a condensation process into a common energy state. The radiated light from such a system shares many similarities with the light emitted from a conventional photon laser, even though the decay of the polaritons is a spontaneous process. We discuss properties of polariton lasers and condensates in GaAs based microcavities. Special emphasis is given to the system’s response to an applied magnetic field. We introduce the magnetic field interactions as a reliable tool to distinguish a polariton laser from a conventional photon laser device. In particular, we will discuss the first successful realization of an electrically pumped polariton laser, which marks a promising step towards the exploitation of polaritonic devices in the real world. We believe that our work can be extended to devices operated at room temperature by transferring the technology to large bandgap semiconductors, or even to GaAs samples with a modified layer design.
DOI: 10.1117/12.2038484
Rights: © 2014 SPIE. This paper was published in Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI and is made available as an electronic reprint (preprint) with permission of SPIE. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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