Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98646
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dc.contributor.authorWang, Xinghuien
dc.contributor.authorZhang, Qingen
dc.contributor.authorJiang, Jieen
dc.contributor.authorLi, Jingqien
dc.contributor.authorZhang, X. X.en
dc.date.accessioned2013-11-08T05:33:13Zen
dc.date.accessioned2019-12-06T19:58:04Z-
dc.date.available2013-11-08T05:33:13Zen
dc.date.available2019-12-06T19:58:04Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationJiang, J., Wang, X., Zhang, Q., Li, J., & Zhang, X. X. (2013). Thermal oxidation of Ni films for p-type thin-film transistors. Physical chemistry chemical physics, 15(18), 6875-6878.en
dc.identifier.urihttps://hdl.handle.net/10356/98646-
dc.description.abstractp-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on–off ratio are found to be 5.2 cm2 V−1 s−1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with “top contact” and “bottom contact” channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications.en
dc.language.isoenen
dc.relation.ispartofseriesPhysical chemistry chemical physicsen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleThermal oxidation of Ni films for p-type thin-film transistorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1039/c3cp50197cen
item.grantfulltextnone-
item.fulltextNo Fulltext-
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