Please use this identifier to cite or link to this item:
Title: The 3-D stacking bipolar RRAM for high density
Authors: Chen, Yi-Chung
Li, Helen Hai
Zhang, Wei
Pino, Robinson E.
Keywords: DRNTU::Engineering::Computer science and engineering
Issue Date: 2012
Source: Chen, Y. C., Li, H. H., Zhang, W., & Pino, R. E. (2012). The 3-D stacking bipolar RRAM for high density. IEEE transactions on nanotechnology, 11(5), 948-956.
Series/Report no.: IEEE transactions on nanotechnology
Abstract: For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material to prevent signal interference between the adjacent memory layers. The process of the isolation material increases the fabrication cost and brings in the potential reliability issue. To alleviate the situation, we introduce two novel 3-D stacking structures built upon bipolar RRAM crossbars that eliminate the isolation layers. The bigroup operation scheme dedicated for the proposed designs to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance is also presented. Our simulation results show that the proposed designs can increase the capacity of a memory island to 8K-bits (i.e., eight layers of 32 × 32 crossbar arrays) while maintaining the sense margin in the worst case configuration greater than 20% of the maximal sensing voltage.
DOI: 10.1109/TNANO.2012.2208759
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SCSE Journal Articles

Citations 10

Updated on Jul 16, 2020

Citations 10

Updated on Mar 6, 2021

Page view(s) 50

Updated on Dec 7, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.