Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98720
Title: Raman-assisted wavelength conversion in chalcogenide waveguides
Authors: Huang, Ying
Shum, Perry Ping
Luan, Feng
Tang, Ming
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Issue Date: 2011
Source: Huang, Y., Shum, P. P., Luan, F., & Tang, M. (2011). Raman-assisted wavelength conversion in chalcogenide waveguides. IEEE journal of selected topics in quantum electronics, 18(2), 646-653.
Series/Report no.: IEEE journal of selected topics in quantum electronics
Abstract: We propose and theoretically investigate chalcogenide waveguide as a more energy-efficient platform than silicon waveguide for coherent anti-Stokes Raman scattering (CARS)-based wavelength conversion. 5.5-dB Stokes to anti-Stokes conversion efficiency is observed in an As2Se3 waveguide Raman wavelength converter, which is more than 10 dB higher than its silicon counterpart. Meanwhile, dispersion engineering is discussed for As2Se3 waveguide, in which the normal material dispersion can be solely compensated by waveguide dispersion in the 1550-nm wavelength band. It is found that a nonlinear dynamic phase shift causes significant fluctuation from the perfect phase-matching condition in the As2Se3 waveguide Raman wavelength converter, highlighted by a 20-dB efficiency reduction when the pump power is high. This is due to the comparable Raman and electronic susceptibility in As2Se3 waveguide. In addition, we explore the characteristics of the CARS process in the weak pump regime for the first time according to our knowledge. Such a scheme results in simultaneous anti-Stokes wavelength generation and signal depletion, which is critical for specific applications such as intensity modulation through pulse erasure. Conversion efficiency is much lower in the weak pump region, influenced by both signal and Stokes pump power. Signal depletion ratio up to 78% can be achieved.
URI: https://hdl.handle.net/10356/98720
http://hdl.handle.net/10220/13437
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2011.2128856
Rights: © 2011 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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