Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98745
Title: Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
Authors: Kyaw, Zabu
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhen Gang
Zhang, Xue Liang
Ji, Yun
Hasanov, Namig
Zhu, Binbin
Lu, Shunpeng
Zhang, Yiping
Teng, Jing Hua
Wei, Sun Xiao
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2014
Source: Kyaw, Z., Zhang, Z.-H., Liu, W., Tan, S. T., Ju, Z. G., Zhang, X. L., et al. (2014). Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes. Applied Physics Letters, 104(16), 161113-.
Series/Report no.: Applied physics letters
Abstract: A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, the electron leakage is found to be effectively reduced, while the hole injection efficiency is simultaneously increased significantly, hence enabling a greatly enhanced radiative recombination rate within the active region. As a result, improvements of 12.25% in the optical output power and 11.98% in the external quantum efficiency are obtained from the proposed device with the respect to the reference device.
URI: https://hdl.handle.net/10356/98745
http://hdl.handle.net/10220/19608
DOI: 10.1063/1.4873395
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4873395].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

SCOPUSTM   
Citations 20

14
Updated on Mar 7, 2021

PublonsTM
Citations 20

13
Updated on Mar 7, 2021

Page view(s) 20

543
Updated on Dec 6, 2021

Download(s) 10

381
Updated on Dec 6, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.