Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98801
Title: AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process
Authors: Yeo, Yee-Chia
Liu, Xinke
Zhan, Chunlei
Chan, Kwok Wai
Liu, Wei
Tan, Leng Seow
Chen, Kevin Jing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Liu, X., Zhan, C., Chan, K. W., Liu, W., Tan, L. S., Chen, K. J.,& Yeo, Y. C. (2012). AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ·cm2 Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process. Applied Physics Express, 5(6).
Series/Report no.: Applied physics express
Abstract: This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest.
URI: https://hdl.handle.net/10356/98801
http://hdl.handle.net/10220/12574
DOI: 10.1143/APEX.5.066501
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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