Please use this identifier to cite or link to this item:
Title: Flexible write-once–read-many-times memory device based on a nickel oxide thin film
Authors: Yu, Q.
Liu, Y.
Liu, Z.
Yu, Y. F.
Lei, H. W.
Zhu, J.
Chen, Tupei
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Yu, Q., Liu, Y., Chen, T., Liu, Z., Yu, Y. F., Lei, H. W., et al. (2012). Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE transactions on electron devices, 59(3), 858-862.
Series/Report no.: IEEE transactions on electron devices
Abstract: A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications.
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2179939
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM



Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.