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|Title:||Flexible write-once–read-many-times memory device based on a nickel oxide thin film||Authors:||Yu, Q.
Yu, Y. F.
Lei, H. W.
Fung, Stevenson Hon Yuen
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Yu, Q., Liu, Y., Chen, T., Liu, Z., Yu, Y. F., Lei, H. W., et al. (2012). Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE transactions on electron devices, 59(3), 858-862.||Series/Report no.:||IEEE transactions on electron devices||Abstract:||A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications.||URI:||https://hdl.handle.net/10356/98819
|ISSN:||0018-9383||DOI:||10.1109/TED.2011.2179939||Rights:||© 2012 IEEE||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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