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Title: Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability
Authors: Lee, In-Yeal
Shin, Jeong-hun
Choi, Daebeom
Baek, Jung Woo
Heo, Jonggon
Park, Wonkyu
Leem, Jung Woo
Yu, Jae Su
Jung, Woo-Shik
Saraswat, Krishna
Park, Jin-Hong
Shim, Jaewoo
Issue Date: 2013
Source: Shim, J., Shin, J., Lee, I.-Y., Choi, D., Baek, J. W., Heo, J., Park, W., Leem, J. W., Yu, J. S., Jung, W.-S., Saraswat, K.,& Park, J.-H. (2013). Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability. Journal of Applied Physics, 114(9), 094515.
Series/Report no.: Journal of applied physics
Abstract: In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramatically reduced due to the defect healing phenomenon that decreases the number of point defects, subsequently providing a higher on/off-current ratio of 5 × 103. In spite of the high healing temperature, junction diodes seem not to suffer from the deep diffusion of phosphorus (P) in Ge because those diffuse mostly through VGe. In addition, it is also confirmed that Ti is an appropriate material in terms of diffusion barrier and diffusivity for Ge n+/p junction contact metal.
ISSN: 0021-8979
DOI: 10.1063/1.4820580
Schools: School of Mechanical and Aerospace Engineering 
Rights: © 2013 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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