Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98937
Title: Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation
Authors: Vicknesh, Sahmuganathan
Arulkumaran, Subramaniam
Ng, Geok Ing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Abstract: An effective suppression of drain current collapse was realized in both Enhancement (E)-mode and Depletion (D)-mode AlGaN/GaN High-electron-mobility-transistors (HEMTs) on 4-inch Silicon (111) by ammonium sulfide [(NH4)2Sx] passivation. The current collapse was studied using the pulsed current-voltage characteristics with the pulse width of 200 ns and pulse period of 1 ms. With reference to the AlGaN/GaN HEMTs without sulfur passivation, about 30% of the drain current collapse was suppressed for drain quiescent biases of 25 to 30 V. Obtaining low current collapse is essential to demonstrate high power GaN HEMTs.
URI: https://hdl.handle.net/10356/98937
http://hdl.handle.net/10220/13454
DOI: 10.1109/MWSYM.2012.6259783
Rights: © Crown
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:TL Conference Papers

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.