Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98941
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dc.contributor.authorHu, S. G.en
dc.contributor.authorLiu, Yangen
dc.contributor.authorChen, Tupeien
dc.contributor.authorLiu, Zhenen
dc.contributor.authorYang, Mingen
dc.contributor.authorYu, Qien
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.date.accessioned2013-09-13T02:10:42Zen
dc.date.accessioned2019-12-06T20:01:20Z-
dc.date.available2013-09-13T02:10:42Zen
dc.date.available2019-12-06T20:01:20Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/98941-
dc.description.abstractThe switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rights© 2012 IEEEen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleEffect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide filmen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TED.2012.2186300en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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