Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/98943
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dc.contributor.authorLiao, Hongen
dc.contributor.authorHu, Hangen
dc.contributor.authorSu, Haoen
dc.contributor.authorWang, Hongen
dc.date.accessioned2013-09-13T02:01:59Zen
dc.date.accessioned2019-12-06T20:01:21Z-
dc.date.available2013-09-13T02:01:59Zen
dc.date.available2019-12-06T20:01:21Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/98943-
dc.description.abstractIn this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electron injection Einj. It is suggested that the difference in high-frequency noise after stress strongly depends on the type of defects generated during HC stresses. Our results provide experimental verification that the shallow interface states/traps at the Si/SiO2 interface introduced by HC stress play an important role in the degradation of high-frequency channel noise.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rights© 2012 IEEEen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDegradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stressen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TED.2012.2212022en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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