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|Title:||Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping||Authors:||Wu, L.
Zhu, W. G.
Du, A. Y.
Tran, Xuan Anh
Liu, W. J.
Zhang, K. L.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Wang, Z., Zhu, W. G., Du, A. Y., Wu, L., Fang, Z., Tran, X. A., et al. (2012). Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping. IEEE transactions on electron devices, 59(4), 1203-1208.||Series/Report no.:||IEEE transactions on electron devices||Abstract:||Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy.||URI:||https://hdl.handle.net/10356/98992
|ISSN:||0018-9383||DOI:||10.1109/TED.2012.2182770||Rights:||© 2012 IEEE||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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